Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

Kret, J.; Tournet, J.; Parola, Stéphanie; Martinez, F.; Chemisana Villegas, Daniel; Morin, R.; de la Mata, M.; Fernández-Delgado, N.; Khan, A. A.; Molina, S. I.; Rouillard, Y.; Tournié, E.; Cuminal, Y.

doi:https://doi.org/10.1016/j.solmat.2020.110795

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Issue date

2021

Author

Kret, J.

Tournet, J.

Parola, Stéphanie

Martinez, F.

Chemisana Villegas, Daniel

Morin, R.

de la Mata, M.

Fernández-Delgado, N.

Khan, A. A.

Molina, S. I.

Rouillard, Y.

Tournié, E.

Cuminal, Y.

Suggested citation

Kret, J.; Tournet, J.; Parola, Stéphanie; Martinez, F.; Chemisana Villegas, Daniel; Morin, R.; ... Cuminal, Y.. (2021) . Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells. Solar Energy Materials and Solar Cells, 2021, vol. 219, 110795. https://doi.org/10.1016/j.solmat.2020.110795.

Abstract

III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys, AlInAsSb exhibits the broadest range of direct bandgaps, making it a promising material for photovoltaic applications. In this work, the behavior of two AlInAsSb/GaSb tandem photovoltaic cells is studied. Material characterization and physics-based 1D modeling are carried out to analyze and discuss performance of the cells. An efficiency of 5.2% is achieved under 1-sun illumination, limited by the AlInAsSb quaternary-alloy properties.

URI

http://hdl.handle.net/10459.1/72829

DOI

https://doi.org/10.1016/j.solmat.2020.110795

Is part of

Solar Energy Materials and Solar Cells, 2021, vol. 219, 110795