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    • Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells 

      Kret, J.; Tournet, J.; Parola, Stéphanie; Martinez, F.; Chemisana Villegas, Daniel; Morin, R.; de la Mata, M.; Fernández-Delgado, N.; Khan, A. A.; Molina, S. I.; Rouillard, Y.; Tournié, E.; Cuminal, Y. (Elsevier, 2021)
      III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys, AlInAsSb exhibits the broadest range of ...